?2001 fairchild semiconductor corporation november 2001 rev. c, november 2001 irfp254b irfp254b 250v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters and switch mode power supplies. features ? 25a, 250v, r ds(on) = 0.14 ? @v gs = 10 v ? low gate charge ( typical 95 nc) ? low crss ( typical 60 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter irfp254b units v dss drain-source voltage 250 v i d drain current - continuous (t c = 25c) 25 a - continuous (t c = 100c) 15.9 a i dm drain current - pulsed (note 1) 100 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 700 mj i ar avalanche current (note 1) 25 a e ar repetitive avalanche energy (note 1) 22.1 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 221 w - derate above 25c 1.79 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.56 c / w r cs thermal resistance, case-to-sink 0.24 -- c / w r ja thermal resistance, junction-to-ambient -- 40 c / w ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g to-3p irfp series gs d
rev. c, november 2001 irfp254b (note 4) (note 4, 5) (note 4, 5) (note 4) ?2001 fairchild semiconductor corporation electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 1.8mh, i as = 25a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 25a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.26 -- v/c i dss zero gate voltage drain current v ds = 250 v, v gs = 0 v -- -- 10 a v ds = 200 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 12.5 a -- 0.1 0.14 ? g fs forward transconductance v ds = 40 v, i d = 12.5 a -- 25 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2600 3400 pf c oss output capacitance -- 290 380 pf c rss reverse transfer capacitance -- 60 80 pf switching characteristics t d(on) turn-on delay time v dd = 125 v, i d = 25 a, r g = 25 ? -- 35 80 ns t r turn-on rise time -- 195 400 ns t d(off) turn-off delay time -- 300 610 ns t f turn-off fall time -- 180 370 ns q g total gate charge v ds = 200 v, i d = 25 a, v gs = 10 v -- 95 123 nc q gs gate-source charge -- 12 -- nc q gd gate-drain charge -- 43 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 25 a i sm maximum pulsed drain-source diode forward current -- -- 100 a v sd drain-source diode forward voltage v gs = 0 v, i s = 25 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 25 a, di f / dt = 100 a/ s -- 300 -- ns q rr reverse recovery charge -- 3.23 -- c
rev. c, november 2001 ?2001 fairchild semiconductor corporation irfp254b 246810 10 -1 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 20406080100 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v note : i d = 25 a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 20406080100 0.0 0.2 0.4 0.6 0.8 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 10 -1 10 0 10 1 0 2000 4000 6000 8000 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
?2001 fairchild semiconductor corporation rev. c, november 2001 irfp254b 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.56 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 s 100 s 1 ms dc 10 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 12.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 11. transient thermal response curve t 1 p dm t 2
rev. c, november 2001 ?2001 fairchild semiconductor corporation irfp254b charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
?2001 fairchild semiconductor corporation rev. c, november 2001 irfp254b peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
rev. c, november 2001 ?2001 fairchild semiconductor corporation irfp254b package dimensions 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?.05 0.60 +0.15 ?.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p
?2001 fairchild semiconductor corporation disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h4 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging irfp254b 250v n-channel b-fet / substitute of irfp254 & irfp254a general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support these n-channel enhancement mode pow er field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin g performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi ciency switching dc/ dc converters an d switch mode powe r supplies. z 25a, 250v { r ds(on) = 0.14 ? @v gs = 10 v z low gate charge ( typical 95 nc) z low crss ( typical 60 pf) z fast switching z 100% avalanche tested z improved dv/dt capability datasheet download this datasheet e - mail this datasheet this page print version related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n ir fp254b - 250v n-channel b-fet / substitute of irfp254 & irfp254a 17-au g -2007 mhtml:file://c:\temp\irfp254b _ fp001.mht
back to top qualification support click on a product for detailed qualification data back to top product product status pb-free status package type leads packing method package marking convention** irfp254b_fp001 not recommended for new designs to - 3p 3 rail line 1: $y (fairchild logo) & z (asm. plant code) & 4 (4-digit date code) line 2: irfp line 3: 254b indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product irfp254b is available. click here for more information . product irfp254b_fp001 ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n ir fp254b - 250v n-channel b-fet / substitute of irfp254 & irfp254a 17-au g -2007 mhtml:file://c:\temp\irfp254b _ fp001.mht
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